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HSC119
Silicon Epitaxial Planar Diode for High Speed Switching
REJ03G0188-0100Z (Previous: ADE-208-615) Rev.1.00 Mar.22.2004
Features
* Low capacitance. (C = 2.0 pF max) * Short reverse recovery time. (trr = 3.0 ns max) * Ultra small Flat Package (UFP) is suitable for surface mount design.
Ordering Information
Type No. HSC119 Laser Mark H1 Package Code UFP
Pin Arrangement
Cathode mark Mark 1
H1
2 1. Cathode 2. Anode
Rev.1.00, Mar.22.2004, page 1 of 4
HSC119
Absolute Maximum Ratings
(Ta = 25C)
Item Peak reverse voltage Reverse voltage Peak forward current Non-Repetitive peak forward surge current Average rectified current Junction temperature Storage temperature Note: 1. Within 1s forward surge current. Symbol VRM VR IFM IFSM *1 IO Tj Tstg Value 85 80 300 4 100 125 -55 to +125 Unit V V mA A mA C C
Electrical Characteristics
(Ta = 25C)
Item Forward voltage Reverse current Capacitance Reverse recovery time*1 Note: Symbol VF1 VF2 IR C trr Min -- -- -- -- -- Typ -- -- -- -- -- Max 0.8 1.2 0.1 2.0 3.0 Unit V A pF ns Test Condition IF = 10 mA IF = 100 mA VR = 80 V VR = 0 V, f = 1 MHz IF = 10 mA, VR = 6 V, RL = 50
1. Reverse recovery time test circuit
DC Supply
0.1F
3k
Sampling Rin = 50 Oscilloscope
Ro = 50 Pulse Generator
Trigger
Rev.1.00, Mar.22.2004, page 2 of 4
HSC119
Main Characteristics
1.0 10-4 10-5
Reverse current IR (A) Forward current IF (A)
10
-1
10-6 10
-7
Ta=75C Ta=50C Ta=25C
10-8 10-9 10-10 10-11
10-3
Ta = 7 5 C Ta = 25C Ta = -25C
10-2
0
0.2
0.4
0.6
0.8
1.0
1.2
0
20
40
60
80
100
Forward voltage VF (V) Fig.1 Forward current vs. Forward voltage
Reverse voltage VR (V) Fig.2 Reverse current vs. Reverse voltage
f = 1MHz
10
Capacitance C (pF)
1.0
0.1 0.1
1.0 Reverse voltage VR (V)
10
Fig.3 Capacitance vs. Reverse voltage
Rev.1.00, Mar.22.2004, page 3 of 4
HSC119
Package Dimensions
As of January, 2003
Unit: mm
1.2 0.10 1.6 0.10
0.13 0.05
0.6 0.10
0.3 0.05 0.8 0.10
Package Code JEDEC JEITA Mass (reference value)
UFP -- Conforms 0.0016 g
Rev.1.00, Mar.22.2004, page 4 of 4
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